Method for manufacturing a semiconductor device having silicide layers

ABSTRACT

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The trench separates a first mesa region from a second mesa region formed in the semiconductor substrate. The trench is filled with an insulating material, and the second mesa region is removed relative to the insulating material filled in the trench to form a recess in the semiconductor substrate. In a common process, a first silicide layer is formed on and in contact with a top region of the first mesa region at the first side of the semiconductor substrate and a second silicide layer is formed on and in contact with the bottom of the recess.

TECHNICAL FIELD

Embodiments described herein relate to methods for manufacturingsemiconductor devices having silicide layers, and to semiconductordevices such as power FETs.

BACKGROUND

Low ohmic electrical connections between conductors and doping regionsformed in the semiconductor substrate of semiconductor devices areneeded to reduce losses and switching capacities. One option to reducethe transition resistance at a junction between, for example, a metallayer and a semiconductor material, is to provide contact doping regionswith high doping concentration. Another option is to provide a silicidelayer between the metal layer and the semiconductor substrate. However,integrating silicide layers into existing manufacturing processestypically require additional steps and thus increase the manufacturingcosts.

There is therefore a desire to provide improved manufacturing processes.

SUMMARY

According to an embodiment, a method for manufacturing a semiconductordevice, includes: providing a semiconductor substrate having a firstside; forming a trench having a bottom, the trench extending from thefirst side of the semiconductor substrate into the semiconductorsubstrate and separating a first mesa region formed in the semiconductorsubstrate from a second mesa region formed in the semiconductorsubstrate; filling the trench with an insulating material: removing thesecond mesa region relative to the insulating material filled in thetrench to form a recess in the semiconductor substrate, the recesshaving at least one side wall covered with the insulating material and abottom; and forming, in a common process, a first silicide layer on andin contact with a top region of the first mesa region at the first sideof the semiconductor substrate and a second silicide layer on and incontact with the bottom of the recess.

According to an embodiment, a method for manufacturing a semiconductordevice, includes: providing a semiconductor substrate having a firstside; forming a plurality of trenches extending from the first side ofthe semiconductor substrate into the semiconductor substrate and aplurality of semiconductor mesa regions extending to the first side,wherein between two adjacent trenches a respective semiconductor mesaregion is arranged; removing selected semiconductor mesa regions betweengiven adjacent trenches to form merged trenches with exposed bottomportions; forming respective first doping regions in remainingsemiconductor mesa regions at the first side of the semiconductorsubstrate; forming second doping regions in the exposed bottom portions;forming respective first silicide layers on and in contact with thefirst doping regions and second silicide layers on and in contact withthe second doping regions: and forming respective first metal layers onand in contact with the first silicide layers and second metal layers onand in contact with the second silicide layers.

According to an embodiment, a method for manufacturing a semiconductordevice, includes: providing a semiconductor substrate having a firstside; forming a plurality of first and second trenches extending fromthe first side of the semiconductor substrate into the semiconductorsubstrate and a plurality of first and second semiconductor mesa regionsextending to the first side, wherein between two adjacent first trenchesa respective first semiconductor mesa region is arranged, and whereinbetween two adjacent second trenches a respective second semiconductormesa region is arranged; removing at least one first semiconductor mesaregion between two adjacent first trenches so that the two adjacentfirst trenches merge and form a first common trench and removing atleast one second semiconductor mesa region between two adjacent secondtrenches so that the two adjacent second trenches merge and form asecond common trench; forming first doping regions of a firstconductivity type in remaining first mesa regions and second dopingregions of the first conductivity type in a bottom portion of the firstcommon trench; forming first doping regions of a second conductivitytype in remaining second mesa regions and second doping regions of thesecond conductivity type in a bottom portion of the second commontrench; forming first silicide layers on and in contact with the firstdoping regions and second silicide layers on and in contact with thesecond doping regions; and forming first metal layers on and in contactwith the first silicide layers and second metal layers on and in contactwith the second silicide layers.

According to an embodiment, a semiconductor device includes: asemiconductor substrate having a first side; a trench structure having abottom and a sidewall, the bottom having at least a first bottom portionand a second bottom portion laterally adjacent to the first bottomportion, wherein each of the first and second bottom portions have aconcave shape with a ridge formed between the first and second bottomportion; an insulating material covering the sidewall and the firstbottom portion of the recess while leaving the second bottom portion ofthe recess uncovered; a mesa region extending to the first side of thesemiconductor substrate and forming the sidewall of the trenchstructure; a first silicide layer on a top region of the mesa region; asecond silicide layer on the second bottom portion of the trenchstructure; a first metal layer on and in contact with the first silicidelayer; and a second metal layer on and in contact with the secondsilicide layer.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The components in the Figures are not necessarily to scale, insteademphasis being placed upon illustrating the principles of the invention.Moreover, in the Figures, like reference signs designate correspondingparts. In the drawings:

FIGS. 1A to 1D illustrate a process for manufacturing a semiconductordevice according to an embodiment;

FIG. 2 illustrates a semiconductor device according to an embodiment;

FIG. 3 illustrates a plan view on a semiconductor device according to anembodiment;

FIG. 4 illustrates a cross sectional view of a portion of thesemiconductor device of FIG. 3;

FIG. 5 illustrates a 3-dimensional view of a portion of a semiconductordevice according to an embodiment described herein;

FIG. 6A illustrates a cross-sectional view and FIG. 6B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 7A illustrates a cross-sectional view and FIG. 7B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 8A illustrates a cross-sectional view and FIG. 8B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 9A illustrates a cross-sectional view and FIG. 9B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 10A illustrates a cross-sectional view and FIG. 10B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 11A illustrates a cross-sectional view and FIG. 11B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 12A illustrates a cross-sectional view and FIG. 12B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 13A illustrates a cross-sectional view and FIG. 13B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 14A illustrates a cross-sectional view and FIG. 14B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment;

FIG. 15A illustrates a cross-sectional view and FIG. 15B illustrates aplan view of a semiconductor device for illustrating a process formanufacturing a semiconductor device according to an embodiment; and

FIG. 15C illustrates a plan view onto a portion of the semiconductordevice illustrated in FIGS. 15A and 15C.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof, and in which are shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top”,“bottom”, “front”, “back”, “leading”, “trailing”, “lateral”, “vertical”etc., is used with reference to the orientation of the Figure(s) beingdescribed. Because components of embodiments can be positioned in anumber of different orientations, the directional terminology is usedfor purpose of illustration and is in no way limiting. It is to beunderstood that other embodiments may be utilized and structural orlogical changes may be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims. The embodiments being described usespecific language, which should not be construed as limiting the scopeof the appended claims.

In this specification, a second side or surface of a semiconductorsubstrate is considered to be formed by the lower surface or back sidewhile a first side or first surface is considered to be formed by thetop or main side or surface of the semiconductor substrate. The terms“above” and “below” as used in this specification, likewise “top” and“bottom.” therefore describe a relative location of a structural featureto another structural feature with consideration of this orientation.Furthermore, spatially relative terms such as “under”, “below”, “lower”,“over”, “upper” and the like, are used for ease of description toexplain the positioning of one feature relative to a second feature.These terms are intended to encompass different orientations of thedevice in addition to different orientations than those depicted in theFigures. Further, terms such as “first”, “second”, and the like, arealso used to describe various features, regions, sections, etc. and arealso not intended to be limiting. Like terms may refer to like featuresthroughout the description.

The terms “electrical connection” and “electrically connected” describesan ohmic connection between two features.

Herein, a “normal projection” onto a plane or surface means aperpendicular projection onto the plane or surface. In other words, theview direction is perpendicular to the surface or plane.

The semiconductor substrate can be made of any semiconductor materialsuitable for manufacturing semiconductor components. Examples of suchmaterials include, without being limited thereto, elementarysemiconductor materials such as silicon (Si), group IV compoundsemiconductor materials such as silicon carbide (SiC) or silicongermanium (SiGe), binary, ternary or quaternary III-V semiconductormaterials such as gallium arsenide (GaAs), gallium phosphide (GaP),indium phosphide (InP), gallium nitride (GaN), aluminium gallium nitride(AlGaN), indium gallium phosphide (InGaPa) or indium gallium arsenidephosphide (InGaAsP), and binary or ternary II-VI semiconductor materialssuch as cadmium telluride (CdTe) and mercury cadmium telluride (HgCdTe)to name few. The above mentioned semiconductor materials are alsoreferred to as homojunction semiconductor materials. When combining twodifferent semiconductor materials a heterojunction semiconductormaterial is formed. Examples of heterojunction semiconductor materialsinclude, without being limited thereto, silicon (Si_(x)C_(1-x)) and SiGeheterojunction semiconductor material. For power semiconductorapplications currently mainly Si, SiC and GaN materials are used.

N-doped regions are referred to as of first conductivity type whilep-doped regions are referred to as of second conductivity type. It is,however, possible to exchange the first and second conductivity type sothat the first conductivity type is p-doped and the second conductivitytype is n-doped.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

FIGS. 1A to 1D illustrate processes of a method for manufacturing asemiconductor device. The left illustration of each of the FIGS. 1A to1D shows a cross-sectional view in a vertical direction and the rightillustration of each of the FIGS. 1A to 1D shows a plan view on relevantportions of the semiconductor device.

A semiconductor substrate 100 is provided, which has a first side orfirst surface 101 formed by the main surface of the semiconductorsubstrate 100. The semiconductor substrate 100 is typically amonocrystalline substrate which can be formed by a singlemonocrystalline bulk material or by a monocrystalline base material anda monocrystalline epitaxial layer formed on the monocrystalline basematerial. The first side 100 can be formed by a specificcrystallographic face such as, for example, the <100> face in case ofsilicon. Other materials can be used as well such as silicon carbide.

According to an embodiment, a first etching mask 181 is formed on thefirst side 101 of the semiconductor substrate 100, typically in contactwith the first side 101. The first etching mask 181 includes one or moreopenings 181 a to define a region or regions where one or more trenchesare to be formed during a subsequent etching process. The first etchingmask 181 can be made of an organic material such as a resin orphotoresist, or can be made of an inorganic material such as an oxide.

Using the first etching mask 181, a trench 108, or trenches 108, areformed using an etching process. Typically, a dry anisotropic etchingprocess such as a plasma-assisted etching process is used to form atrench 108, or trenches, having an aspect ratio of at least 1:1(depth/width), and particularly of at least 2:1, and more particularly10:1 and more.

As illustrated in FIG. 1A, the trench 108 has a bottom 108 a which canhave a concave shape resulting from the etching process. Trenchsidewalls 108 b extends from the trench bottom 108 a to the first side101 of the semiconductor substrate 100. The trench 108 thus extends fromthe first side 101 of the semiconductor substrate 100 into thesemiconductor substrate 100.

The trench 108 further separates a first mesa region 107 a, which isformed in the semiconductor substrate 100 as a result of the previousetching process, from a second mesa region 107 b, which is also formedin the semiconductor substrate 100 by the etching process. The first andsecond mesa regions 107 a and 107 b thus form the opposite sidewalls 108b of the trench 108.

The trench 108 can be formed to completely laterally surround the secondmesa region 107 b. The right illustration in FIG. 1A shows a plan viewonto the first side 101 of the semiconductor substrate 100. The opening181 a of the mask 181 has a rectangular ring-like shape which shapedefines the final shape or layout of the trench 108 as closed ring whenseen in plane projection onto the first side 101 of the semiconductorsubstrate 100. The shape of the trench 108 defined by the opening 181 aof the mask 181 can be elongated so that a thin second mesa region 107 bis formed when seen in plane projection onto the first side 101. Infurther embodiments, two concentric ring-shaped trenches 108 are formeddefining the second mesa region 107 b between the trenches 108. To thisend, the first etching mask 181 includes two or more ring-like openings181 a, which are concentric to each other.

In the embodiment shown in FIGS. 1A to 1D, a ring-like formed trench 108as shown in plain projection onto the first side 101 in the rightillustration of FIG. 1A is formed, and the two bottoms 108 a shown inthe left illustration of FIG. 1A are part of a common button of thering-like trench 108. The ring-like trench 108 surrounds and define thesecond mesa region 107 b.

According to an embodiment, the second mesa region 107 b is laterallycompletely separated from the first mesa region 107 a by the trench 108or trenches 108.

According to an embodiment, the second mesa region 107 b forms, whenseen in plane projection onto the first side 101 of the semiconductorsubstrate 100, a closed ring structure, wherein the second mesa region107 b is laterally bound by an inner trench 108 and an outer trench 108.

In a further process, as illustrated in FIG. 1B, the trench 108 isfilled with an insulating material 160 to cover the bottom 108 a and thesidewall 108 b of the first trench 108 formed by the first mesa region107 a. In an embodiment, the trench 108 is completely filled withinsulating material 160 so that the sidewalls of the first trench 108are completely covered by the insulating material 160. When the trench108 completely surrounds the second mesa region 107 b, the second mesaregion 107 b is also completely laterally surrounded by the insulatingmaterial 160.

In a further process, as also illustrated in FIG. 1B, the second mesaregion 107 b is removed, relative to the insulating material 160 filledin the trench 108, by an etching process to form a recess 109 in thesemiconductor substrate 100. The recess 109 has at least one side wall109 b formed by the insulating material 160 and a bottom 109 a. Thebottom 109 has a rounded or concave shape. Respective ridges 109 c areformed between the bottom 109 a of the recess 109 and the bottoms 108 aof the respective trenches 108. The ridges 109 s run along the extensionof the trenches 108.

The recess 109 and the adjacent trenches 108 form together a mergedtrench having sidewalls 109 b, defined by the outer sidewalls 108 b ofthe respective trenches 108, which are covered by the insulatingmaterial 160. A space defined by the recess 109 is formed betweenopposite layers of insulating material 160. This space basicallycorresponds to the removed second mesa region 107 b.

The merged trench form a trench structure having a first bottom portionthat corresponds to the bottom 108 a of the trench 108 and a secondbottom portion that corresponds to the bottom 109 a of the recess 109.The first bottom portion is covered by the insulating material 160 whilethe second bottom portion remains exposed. Typically, the second bottomportion is laterally completely surrounded by the first bottom portionor first bottom portions.

For removing the second mesa region 107 b, an etching process can beused, which can be, for example, an isotropic dry etching process or anisotropic wet etching process. As illustrated in FIG. 1B, the firstetching mask 181 is removed and replaced by a second etching mask 182which covers the first mesa region 107 a but leaves the second mesaregion 107 b uncovered in opening 182 a. The opening 182 a of the secondetching mask 182 is typically wider than the width of the second mesaregion 107 b to provide for misalignment of the second etching mask 182.The etching process for removing the second mesa region 107 b employsthe second etching mask 182 to protect the first mesa regions 107 a. Thefirst etching mask 181 can be removed prior to filling the trenches 108with the insulating material 160. Alternatively, the first etching mask181 can be removed after filling the trenches 108 with the insulatingmaterial 160.

The recess 109 has a depth d which can basically correspond to the depthof the trench 108. The depth d of the recess 109, defined as distancebetween the first side 101 of the semiconductor substrate 100 and thebottom 109 a of the recess 109, can be adjusted by controlling theetching time so that the bottom 109 a of the recess 109 can be above,below, or substantially at the same level as the bottom 108 a of thetrenches 108. The depth d can be, for example, at least 500 nm, and inparticular at least 800 nm or at least 1200 nm.

A first doping region 116 in a top region 110 of the first mesa region107 a and a second doping region 114 in a portion of the bottom 109 acan then be formed, for example by implantation. It would also bepossible to form only one of the first and second doping regions 116,114. The first and second doping regions 116, 114 are typically of thesame conductivity type, but can alternatively also of oppositeconductivity type.

In a common process, as shown in FIGS. 1C and 1D, a first silicide layer151 is formed on and in contact with the top region 110 of the firstmesa region or the first mesa regions 107 a at the first side 101 of thesemiconductor substrate 100, and a second silicide layer 152 is formedon and in contact with the bottom 109 a of the recess 109. If first andsecond doping regions 116, 114 were formed, the respective silicidelayers 151, 152 are in contact with the respective doping regions 116,114. For example, the first silicide layer 151 can be in contact withthe first doping region 116, and the second silicide layer 152 can be incontact with the second doping region 114.

The common process for forming the first and second silicide layers 151,152 can include, according to an embodiment, depositing a metal liner150 which includes at least a silicide-forming metal on the first side101 of the semiconductor substrate 100 and in the recess 109, forexample by conformal deposition on the top region 110 of the first mesaregion 107 a, on exposed portions of the insulating material 160 and onthe bottom 109 a of the recess 109. FIG. 1C shows that the metal liner150 is conformably deposited and lines the bottom 109 a as well as theexposed regions of the insulating material 160 and the exposed topregion 110 of the first mesa region 107 a.

The metal liner 150 can be comparably thin, for example having athickness of between 5 nm and 50 nm. Suitable metals for the metal liner150 are Ti, Co, Ni, W, Ta, Mo, Pt

By depositing the metal liner 150, semiconductor portions, which areexposed at the bottom 109 a of the recess 109 and at the top region 110of the first mesa region 107 a, are covered with the metal liner 150.The sidewalls 109 b of the merged trench are protected by the insulatingmaterial 160 which has a thickness which is sufficient to preventsubsequent reaction between the silicide-forming metal and thesemiconductor material of the first mesa region 107 a.

Prior to depositing the metal liner 150 a cleaning step can be appliedto remove natural oxide films which may have grown on exposed portionsof the semiconductor substrate 100.

In a further process as illustrated in FIG. 1D, a thermal treatment isconducted so that the silicide-forming metal of the metal liner 150reacts with the exposed regions of the semiconductor substrate 100 toform the first and second silicide layers 151, 152. Since the insulatingmaterial 160 prevents contact between the metal liner 150 and thesidewalls 109 b of the merged trench, i.e. the sidewalls of the firstmesa regions 107 a that face each other and which are directed to themerged trench, the first and second silicide layers 151, 152 are onlyformed on or in exposed regions of the semiconductor substrate 100. Inthe embodiment shown in FIG. 1D, the exposed regions are the top regions110 of the first mesa regions 107 a and the exposed portions of thetrench 109 a of the recess 109. The sidewalls 109 b of the merged trench109 remain free from silicide layers. Therefore, the first silicidelayer 151 formed on and in contact with the top portion 110 of the firstmesa region 107 a is separated from the second silicide layer 152 formedon exposed portions of the bottom 109 a.

The first and second silicide layers 151, 152 are formed in a commonprocess from a common metal liner 150 so that the first and secondsilicide layers 151, 152 are made of the same material.

The vertical distance between the first silicide layer 151 and thesecond silicide layer 152 approximately corresponds to the distance dbetween the first side 101 of the semiconductor substrate 100 and thebottom 109 a of the recess 109. This vertical distance can be, forexample, at least 500 nm, and in particular at least 800 nm. In furtherembodiments the vertical distance can be, for example, at least 1000 nmand in particularly at least 1500 nm.

The thermal treatment that is suitable for reacting the silicide-formingmetal of the metal liner 150 with the exposed regions of thesemiconductor substrate 100 can include annealing the metal liner 150 inan inert atmosphere at a temperature of about 300° C. to about 1000° C.for about 10 second to about 180 minutes.

After conducting the thermal treatment, unreacted silicide-forming metalwhich remained on the formed silicide layers 151, 152 and on theinsulating material 160 is removed. This removal can include removal ofan ohmic electrical connection between the first silicide layer 151 andthe second silicide layer 152 by the metal liner 150. This ohmicdisconnection provides separate electrical connections to differentdoping regions which can be formed prior to the formation of thesilicide layers 151, 152 at the bottom 109 a of the recess 109 and atthe top region 110 of the first mesa region 107 a, respectively.

Since the insulating material 160 covers the sidewalls of the first mesaregions 107 a and also the bottoms 108 a of the trenches 108, nosilicide layers are formed in the semiconductor material 100 in theseregions. In the embodiment illustrated in FIGS. 1A to 1D, the secondsilicide layer 152 therefore extends approximately between the ridges109 c formed between the bottoms 108 a of the trenches 108 and thebottom 109 a of the recess 109, respectively.

Depending on the temperature and duration of the thermal treatment, thesecond silicide layer 152 can also partially extend below the insulatingmaterial 160 and thus occupies portions of the bottoms 108 a of thetrenches 108 directly adjacent to the ridges 109 c. Typically, thesecond silicide layer 152 does not occupy a large portion of the bottoms108 a of the trenches 108 and remain laterally spaced from the sidewalls108 b of the trenches 108, which also form the sidewalls of the firstmesa regions 107 a.

The first silicide layer 151 typically completely covers the previouslyexposed top portion 110 of the first mesa regions 107 a and laterallyextends up to the sidewalls of the first mesa region 107 a.

In a further process, as illustrated in FIG. 1D, a common metal layer isdeposited on and in contact with the first silicide layer 151 and on andin contact with the second silicide layer 152. The common metal layertypically fills the recess 109, overfills the top portion of 109 andcovers the insulating material 160. Voids and seams may remain at thebottom of the recess 109 depending on the selected conditions. Thecommon metal layer therefore completely covers the first side 101 of thesemiconductor substrate 100 and can form a substantially plane surface.To improve planarity of the common metal layer a polishing step such asa chemical-mechanical polishing (CMP) can be carried out after thedeposition of the common metal layer.

By using a mask layer formed on the common metal layer for definingfirst and second regions, the common metal layer is etched using themask layer as etching mask to form a first metal layer 171 on and incontact with the first silicide layer 151 and a second metal layer 172on and in contact with the second silicide layer 152. This etching canalso include ohmic disconnecting the first metal layer 171 from thesecond metal layer 172 so that electrically and structurally separatemetal contacts are formed on and in contact with the respective firstand second silicide layers 151 and 152. The first metal layer 171 andthe second metal layer 172 are spaced apart from each other and aretypically not in contact with each other.

The processes described above thus allow formation of separate silicidelayers at different levels by a first common process. The separatesilicide layers 151, 152 can be vertically spaced from each other by adistance of at least 500 nm, which distance is defined by the depth d ofthe recess 109, or more generally, by a step formed at the first side101 of the semiconductor substrate 100. The separate silicide layers canbe in contact with different doping regions which are spaced from eachother, so that a low electrical contact resistance to different dopingregions arranged at different levels can be provided.

The processes further allow formation of separate metal layers 171, 172by a second common process after the first common process for formingthe separate silicide layers 151, 152. The separate metal layers 171,172 are formed by structuring a common metal layer using a mask-assistedanisotropic etching process such as an RIE etching process. The separatemetal layers 171, 172, i.e. the first metal layer 171 and the secondmetal layer 172, provide respective ohmic contacts to the first silicidelayer 151 and to the second silicide layer 152 and can therefore also bedescribed as contact structures for contacting silicide regions ordoping regions which include this silicide layers for reducing thecontact resistance to the contact structures.

At least one of the contact structures, in the embodiment shown in FIGS.1A to 1D the contact structure that is formed by the second metal layer172, is formed as pillar or fin that extends from the second silicidelayer 152 at the bottom 109 b of the recess 109 to above the first side101 of the semiconductor substrate 100. An electrical contact can thusbe provided to a doping region which is spaced from the first side 101of the semiconductor substrate 100 by the depth d. A lateral electricalinsulation between the second metal layer 172 and the first mesa regions107 a is provided by the insulating material 160 which was filled intothe previously formed trenches 108. In further embodiments, theinsulating material 160 is removed and replaced by other insulatingstructures.

According to an embodiment, the second metal layer 172 has a largerthickness than the first metal layer 171 and extends from the secondsilicide layer 152 to above the first side 101 of the semiconductorsubstrate 100.

According to an embodiment, a semiconductor device having asemiconductor substrate 100 with a first side 101 is provided. Thesemiconductor substrate 100 includes a trench structure 108, 109 havinga bottom 108 a, 109 a and a sidewall 109 b. The trench structure can beformed as described above by forming first a plurality of trenches 108and subsequently removing selected trenches. Each trench structureincludes a bottom having at least a first bottom portion 108 a and asecond bottom portion 109 a laterally adjacent to the first bottomportion 108 a. Each of the first and second bottom portions 108 a, 109 ahave a concave shape with a ridge 109 c formed between the first andsecond bottom portions 108 a, 109 a.

An insulating material 160 covers the sidewalls 109 b and the firstbottom portion 108 a of the recess 109 while leaving the second bottomportion 109 a of the recess 109 uncovered. A mesa region 107 a extendsto the first side 101 of the semiconductor substrate 100 and forms thesidewall 109 b of the trench structure 108, 109.

A first silicide layer 151 is disposed on a top region 100 of the mesaregion 107 a, and a second silicide layer 152 is disposed on the secondbottom portion 109 a of the trench structure 108, 109. A first metallayer 171 is disposed on and in contact with the first silicide layer151, and a second metal layer 172 is disposed on and in contact with thesecond silicide layer 152.

With reference to FIGS. 2 to 5 embodiments of semiconductor devices,which are vertical power semiconductor devices, are described.

FIG. 2 shows an equivalent circuit diagram of a semiconductor device 230according to an embodiment. The semiconductor device 230 comprises anenhancement transistor 231 (normally-off transistor) and a plurality ofdepletion transistors 230 a to 230 d (normally-on transistors). Theenhancement transistor 231 comprises a gate electrode, a drain regionand a source region. The gate electrode G of the enhancement transistor231 is also the control gate for the semiconductor device 230. Theenhancement transistor 231 and the depletion transistors 230 a to 230 dare integrated in a common semiconductor substrate.

When a suitable voltage is applied to the gate electrode G, theenhancement transistor 231 is rendered conductive. The plurality of thedepletion transistors 230 a to 230 d are connected in series with eachother and to the enhancement transistor 231. The entirety of thedepletion transistors 230 a to 230 d can be considered to act as a driftzone 237 of the enhancement transistor 231. In this case, the terminal Dcan be regarded as a drain terminal of the power semiconductor device230. The terminal S, which is connected with the source of theenhancement transistor 231, acts as source of the semiconductor device230.

As shown in FIG. 2, the voltage appearing at the drain of the depletiontransistor 231 is applied to the gate of the depletion transistor 230 b.The voltage appearing at the source of the depletion transistor 231 isapplied to the gate of the transistor 230 a. Each of the depletiontransistors 230 c to 230 d has its gate electrode connected to the drainof another depletion transistor 230 a to 230 b which is arranged twopositions in the series before the respective depletion transistors 230c to 230 d. Therefore, the output of any transistor 231, 230 a to 230 din the series determines the gate voltage which is applied to atransistor at a later position within the series. The semiconductordevice 230 thus formed is a so-called ADZFET (“active drift zone fieldeffect transistor”) having a controllable drift zone formed by thedepletion transistors 230 a to 230 d.

The semiconductor device of FIG. 2 illustrates four depletiontransistors 230 a to 230 d and one enhancement transistor 231. While thesemiconductor device typically includes one enhancement transistor 231,the number of the depletion transistors 230 a to 230 d is not limitedand can be adapted in view of the desired blocking voltage.

The semiconductor device 230 can additionally comprise a plurality ofclamping elements 233, 232 a to 232 d, wherein each of the clampingelements is connected in parallel to each of the transistors 231 and 230a to 230 d. An overvoltage protection for the respective transistor 231and 230 a to 230 d is provided by the clamping elements 233, 232 a to232 d. The clamping element can be Zener diodes or other suitableelements such as PIN diodes, tunnel diodes, avalanche diodes or thelike. The clamping elements 233, 232 a to 232 d are optional.

Each of the transistors 231, 230 a to 230 d is capable of blocking agiven voltage such as, for example, 20 V. Due to the series connection,the total blocking voltage of the semiconductor device 230 is muchlarger and approximately equal to the blocking voltage of eachtransistor 231, 230 a to 230 d multiplied by the number of thetransistors 231, 230 a to 230 d. It is thus possible to form a powersemiconductor device 230 capable of blocking large voltages by a seriesof transistors each being capable of blocking a much lower voltage.Since the blocking voltage which each of the transistors 231, 230 a to230 d has to withstand is moderate, the device requirements are not asdemanding as for a single transistor which would need to block a muchhigher voltage.

The transistors 231, 230 a to 230 d are also referred to assemiconductor elements herein.

FIG. 3 illustrates a plan view onto a semiconductor device 230 whichincludes a plurality of concentric element mesa regions 205 which arelaterally separated from each other by respective element separatingtrenches 206. FIG. 4 illustrates a cross-sectional view through twoadjacent element mesa regions 205 separated by an element separatingtrench 206. In each of the element mesa regions 205 a respectivesemiconductor element 230 a and 230 b is integrated. Each element mesaregion 205 includes first mesa regions 207 and merged trenches 209formed between, and laterally separating, adjacent first mesa regions207. Each of the first mesa regions 207 forms a closed ring-likestructure when seen in plane projection onto the first side 201 of thesemiconductor substrate 200.

For illustration purposes, FIG. 4 only illustrates the merged trenches209 with the insulating material 260 formed on the sidewalls of theadjacent first mesa regions 207.

FIG. 5 illustrates a portion of a single semiconductor element 230 b.

The first side 201 of the semiconductor substrate 200 is shown to beformed by the upper side of the first mesa regions 207. Each of thefirst mesa regions 207 forms a respective fin of the semiconductorelement 230 a. Between adjacent first mesa regions 207, trenches 208which are filled with insulating material and which includes respectivegate electrodes 221, and a second metal layer 272 forming a contactstructure are arranged. Typically, the first mesa regions 207 and thesecond metal layer 272 form an alternating arrangement of conductivesource contacts and mesa regions 207, in which body regions 212, driftregions 213 and drain regions 216 are formed. A first mesa region 207and an adjacent second metal layer 272 form together a single cell ofthe semiconductor element 230 a. Hence, each of the semiconductorelements 230 a to 203 d can include a plurality of transistor cells eachhaving one mesa region and a source contact, wherein both the mesaregion and the source contact have a fin-like shape.

The semiconductor elements can also be formed by other types of the FETssuch as IGBTs. In this case, the drain region is replaced by an emitterregion of opposite conductivity type.

The second metal layer 272, which form respective source contacts, canbe made of highly doped semiconductor material or of metal or metalalloy. The source contact extend from the first side 201 to respectivesecond silicide layer 152 formed at the bottom of the merged trench. Thesecond silicide layers 252 are in contact with highly doped sourcecontact regions 214 integrated into the semiconductor substrate 200 atthe bottom of the merged trenches as described above.

The first mesa regions 207 are made of semiconductor material. The firstmesa regions 207 can be bulk material or formed by epitaxial depositionfollowed by etching. As illustrated in FIG. 5, p-doped body regions 212,weakly n-doped drift regions 213, and highly n-doped drain regions 216are formed in this order from a lower end of the first mesa region 207to the first side 201. The doping relations can also be reversed and arenot limited to the specific embodiments illustrated herein.

Gate electrodes 221 are formed between any two adjacent first mesaregions 207. More specifically, a gate electrode 221 is arrangedlaterally between a body region 212 integrated into the first mesaregion 207 and the second metal layer 272 forming the source contact.The gate electrodes 221 are insulated from the semiconductor substrate200, more specifically from the source region 211, the first mesaregions 207 and the second metal layer 272 by a gate dielectric 222.

When a voltage above a given threshold voltage is applied to the gateelectrodes 221, an enhancement channel is formed in the body region 212along the gate dielectric between the source region 211 and the driftregion 213 in case of an enhancement device. In case of a depletiondevice, the intrinsically formed channel is depleted when the gatevoltage exceeds (i.e. is more negative in case of an n-channel MOSFET) agiven threshold voltage, and thus, the ohmic connection between thesource region 211 and the drift region 213 is interrupted.

As illustrated in FIG. 5, the second metal layer 272 forms a sourcemetallization that extends to and projects above the first side 201 ofthe semiconductor substrate 200. Furthermore, a drain metallization 271is formed on the first side 201 of the semiconductor substrate 200 andin contact with drain regions 216. The drain metallization 271 is formedby the first metal layer described above. FIG. 5 also illustrates a gatemetallization 273 which is in ohmic connection with the gate electrodes221. For illustration purposes only, the top part of the first andsecond metal layers 271, 272 are removed in the left part of FIG. 5.

Since each of the transistor cells only needs to block a comparably lowvoltage, such as 20 V, the blocking capabilities are not demanding. Thisimproves the reliability of the semiconductor device 230. Therefore, theinsulation between the gate electrode 221 and the source contact formedby the second metal layer 272 can be provided by the comparably thingate dielectric that is also arranged between the gate electrode 221 andthe adjacent body region 212.

In the embodiments illustrated in FIGS. 2 to 5 the previously formedsecond mesa regions are not shown as they are removed and replaced bythe second metal layer 272 which form respective source contacts.

With reference to FIGS. 6 to 14 processes for forming semiconductordevices according to an embodiment are described in more detail. TheFigures nominated by A illustrate a cross-sectional view and the Figuresnominated by B illustrate a top or plan view of a portion of asemiconductor substrate into which the semiconductor devices areintegrated.

Similar as in the embodiments described above, a semiconductor substrate300 having a first side 301 which is formed by the top or main side ofthe semiconductor substrate 300 is provided. The semiconductor substrate300 can be, for example, formed by an n-doped epitaxial layer arrangedon a bulk semiconductor material or just the bulk material. Portions ofthe epitaxial layer or the bulk material will later form respectivesource regions of the semiconductor devices.

A first etching mask 381 is formed on the first side 301 of thesemiconductor substrate 300. The first etching mask 381 includesopenings 381 a. As best shown in FIG. 6B, the first etching mask 381includes bar- or stripe-like mask portions which are surrounded by theopening 381 a. The bar-like mask portions define the size and locationof the subsequently formed first and second mesa regions 307 a and 307b.

Typically, the first and second mesa regions 307 a and 307 b will havethe same size and will be spaced from each other at a given pitch.Forming the first and second mesa regions 307 a and 307 b as a regularstructure facilitates mask formation and the etching process.

As best shown in FIG. 6A the semiconductor substrate 300 is etched usingan anisotropic etching process to form trenches 308 that separate thefirst and second mesa regions 307 a and 307 b from each other. Each ofthe trenches 308 has a bottom 308 a and respective sidewalls 308 b whichcorresponds to respective sidewalls of the respective first and secondmesa regions 307 a and 307 b. As shown in FIG. 6B, the trenches form atrench structure that surrounds the first and second mesa region 307 aand 307 b.

Typically, a plurality of trenches 308 are etched which extend from thefirst surface or first side 301 of the semiconductor substrate 300 intothe semiconductor substrate 300 so that a plurality of first and secondsemiconductor mesa regions 307 a and 307 b are defined which extend tothe first surface or first side 301. Between two adjacent trenches 308 arespective semiconductor mesa region 307 a, 307 b is arranged. The firstand second semiconductor mesa regions 307 a, 307 b are typicallycompletely laterally separated by the trenches 308.

After removal of the first etching mask 381, the trenches 308 are filledwith an insulating material 360 as illustrated in FIGS. 7A and 7B orwith layers of different materials which completely overfill thetrenches. One or more of the insulating material 360 can also completelycover the first side 301 of the semiconductor substrate 300. Suitablematerials used as insulating material are inorganic oxides or nitridessuch as silicon oxide or nitride or organic materials such as resins orcarbon. Material for conducting or embedded conducting layers cancontain amorphous or poly silicon, metals like TiN or W.

The insulating material 360 can be etched back to expose the first side301 of the semiconductor substrate 300 until the top region of the firstand second mesa regions 307 a and 307 b become exposed as best shown inFIG. 8A. The trenches 308 remain filled with the insulating material 360that forms spacers 361 which cover the sidewalls of the trenches 308 andthe first and second mesa regions 307 a and 307 b.

As shown in FIGS. 9A and 9B the second etching mask 382 is then formedon the first side 301 of the semiconductor substrate 300 to cover thefirst mesa regions 307 a while leaving the second mesa regions 307 buncovered in openings 382 a of the second etching mask 382. The openings382 a can be larger, when seen in plane projection onto the first side301, than the second mesa regions 307 b with the edges of the openings382 a being spaced from the second mesa regions 307 b. The secondetching mask 382 and the insulating material 360 in the trenches 308form together a common etching mask for a subsequent selective removalof the second mesa regions 307 b. The selective removal of the secondmesa regions 307 b results in the formation of merged trenches 309 whichinclude the trenches 308 filled with the insulating material 360 andrespective recesses. Each merged trench 309 includes sidewalls 309 b anda bottom 309 a that extends between opposite sidewalls 309 b.

As shown in FIG. 9A, a central portion of the bottoms 309 a remainuncovered while outer portions of the bottoms 309 a are covered by thespacers 361 formed by the insulating material 360 which remained in thetrenches 308.

Turning to FIGS. 10A and 10B, a first process for forming doping regionsare described. A first implantation mask 391 is formed in a first deviceregion 341 while leaving a second device region 342 of the semiconductordevice uncovered. Dopants are then implanted into uncovered top regionsof the first mesa regions 307 a in the second device region 342 and inthe exposed portions of the bottom 309 a of the merged trench 309 in thesecond device regions 342. By this first implantation process, n-typedoping regions 314 a and 316 a are formed. The doping regions 316 a,which are formed in top portions of the exposed first mesa regions 307a, are referred to as first doping regions of the first conductivitytype while the doping regions 314 a, which are formed in exposed bottomportions of the merged trench 309, are referred to as second dopingregions of the first conductivity type. The first doping regions 316 awill later form respective drain regions while the second doping regions314 a will later form source contact regions.

As illustrated in FIGS. 11A and 11B, the first implantation mask 391 isremoved and a second implantation mask 392 is formed to cover the seconddevice region 342 while leaving the first device region 341 uncovered.The first and second implantation mask 391, 392 can be formed to becomplementary with each other.

Using a further implantation process, for example to implant p-typedopants, first and second doping regions 314 b, 316 b are formed in theexposed top regions of the first mesa regions 307 a and bottom regions309 a of the merged trenches 309 of the first device region 341. Thesedoping regions 314 b, 316 b are of the second conductivity type and arereferred to as first and second doping regions of the secondconductivity type.

FIGS. 11A and 11B illustrate integration of semiconductor elements ofopposite conductivity type into a semiconductor device, with a firstsemiconductor element integrated into the first device region 341 and asecond semiconductor element integrated into the second device region342. If semiconductor elements of opposite conductivity type are notneeded, then a single implantation process can be applied and formationof the first and second implantation mask 391, 392 can be dispensedwith.

The first device region 341 can also be described as having a pluralityof first mesa regions and first trenches 308, wherein at least one firstsemiconductor mesa region between two adjacent first trenches is removedso that the two adjacent first trenches merge and form a first commontrench. The first device region 342 can also be described as having aplurality of second mesa regions and second trenches 308, wherein atleast one second semiconductor mesa region between two adjacent secondtrenches is removed so that the two adjacent second trenches merge andform a second common trench 309. The common trench 309 shown in thefirst device region 341 forms for example a first common trench and thecommon trench 309 shown in the second device region 342 forms forexample a second common trench. The FIGS. 10A, 10B, 11A and 11Btherefore also illustrate that first doping regions 316 a of a firstconductivity type are formed, adjacent to the first common trench, inremaining first mesa regions in the first device region 341 and thatsecond doping regions 314 a of the first conductivity type are formed ina bottom portion of the first common trench in the first device region341. Furthermore, first doping regions 316 b of a second conductivitytype are formed, adjacent to the second common trench, in remainingsecond mesa regions in the second device region 342, and second dopingregions 314 b of the second conductivity type are formed in a bottomportion of the second common trench in the second device region 342.

After removal of the second implantation mask 392 first silicide layers351 are formed on and in contact with the first doping regions 316 a.316 b at the first side 301 of the semiconductor substrate 300 andsecond silicide layers 352 are formed on and in contact with the seconddoping regions 314 a, 314 b at the exposed bottom portions 309 a of themerged trenches 309, as illustrated in FIGS. 12A and 12B. The first andsecond silicide layers 351 and 352 can be formed as described inconnection with the FIGS. 1A to 1D by first depositing a common metalliner having a silicide-forming metal which is then subjected to athermal treatment to allow reaction of the silicide-forming metal withthe exposed portions of the semiconductor substrate 300.

As illustrated in FIGS. 13A and 13B a common metal layer 370 isdeposited which completely fills the merged trenches 309 to extend tothe second silicide layers 352 at the bottoms 309 a of the mergedtrenches 309. The deposition of the common metal layer 370 can includedeposition of a first liner such as a Ti, TaN, TiN/Ti or WN followed bythe deposition of a metal material like W, Cu or an aluminum-containingalloy such as AISiCu.

In further processes, as illustrated in FIGS. 14A and 14B, a thirdetching mask 383 is formed on a top side of the common metal layer 370defining the size and location of first and second metal layers 371,372.

The first metal layers 371 are formed to be on and in contact with thefirst silicide layers 351, and the second metal layers 372 are formed tobe on and in contact with the second silicide layers 352. As shown inFIG. 14A, the second metal layer 372 extends from the bottom of arespective merged trench 309 to above the first side 301 of thesemiconductor substrate 300. The second metal layer 372 forms apillar-like contact structure that allows to contact the second dopingregions 314 a, 314 b formed at the bottoms 309 a of the merged trenches309. In the final semiconductor device, the second metal layer 372functions as source contact. The first metal layer 371 also forms acontact structure which provides an ohmic connection to the first dopingregions 316 a, 316 b at the top portion of the first mesa regions 307 a.In the final semiconductor device, the first metal layer 37 a is used asdrain contact.

The first and second metal layers 371, 372 are structured such that theyform separate and disparate metallic structures each of which forconnecting a different doping region.

FIGS. 15A and 15B illustrate the structure of a final semiconductordevice 330 a. The semiconductor device 330 a is an enhancement device.FIG. 15B illustrates a modification of the structure of thesemiconductor device 330 a to provide a body contact structure 330 b forproviding electrical contact to the body region. The structure of thesemiconductor device is explained relative to the semiconductor device330 a shown in FIG. 15A, and then the differences between FIGS. 15A and15B are explained.

The semiconductor device 330 a and the body contact structure 330 b aretypically integrated in a common semiconductor substrate 300. The leftand right parts of FIGS. 15A and 15B illustrate modifications withregard to the conductivity type of the semiconductor devices. For powerdevices, typically so-called n-channel devices are used, which includean n-doped source region 311, a p-doped body region 312, a highlyn-doped drift region 313, and a highly p-doped drain region 316. Thebody region 312, the drift region 313 and the drain region 316 areformed in the first mesa region 307 a as described above. The sourceregion 311 is formed below the first mesa region 307 a and the mergedtrenches 309. For improving ohmic contact between the source region 311and the metallic source contact formed by the second metal layer 372, ahighly n-doped source contact region 314 is formed at the bottom of themerged trench 309 which is covered with a second silicide layers 352disposed the source contact region 314 and the second metal layer 372.

For example, the left part of each of the FIGS. 15A and 15B illustratesthe doping relations of an n-channel device 330 a and the right part ofeach of the FIGS. 15A and 15B illustrate the doping relations of a bodycontact structure 330 b.

FIGS. 15A and 15B also illustrate that the insulating material 360disposed between the second metal layer 372 and the sidewalls 309 b ofthe merged trench 309 includes a gate dielectric, or first insulatinglayer, 322, a gate electrode 321, and an insulating layer, or secondinsulating layer, 323 above the gate electrode 321. This layer stack caninclude a conducting layer forming respective gate electrodes 321 whichare formed adjacent to the body region 312.

Typically, the insulating material 360 can include several or at leasttwo insulating layers and at least one conductive layer arranged betweenthe at least two insulating layers. The above mentioned layer stack canbe formed, for example, during the processes as shown in FIGS. 8A and8B. For sake of ease of understanding, the formation of this layer stackhas not been shown in the FIGS. 8A and 8B. The layer stack includes thegate electrode as described below. The insulating material 360 cantherefore include the gate dielectric 322, gate electrode 321, andsecond insulating layer 323 above the gate electrode 321. It would alsobe possible to form the layer stack at a later stage, for example byremoving the insulating material 360 and then forming the layer stack.

For example, first a dielectric layer (a first insulating layer 322) canbe conformally deposited in the trenches 308, which dielectric layer 322forms, with optional oxidation or annealing steps, the gate dielectriclayer 322. In a further step, a conductive material such as polysiliconis deposited to completely fill the remaining opening of the trenches308. With a gate recess process, e.g. an isotropic polysilicon etch, thegate electrode 321 is formed. The gate dielectric layer 322 typicallyremains on the sidewalls of the trenches 308 and protects thesemiconductor material of the first mesa regions 307 a. To cover thegate electrode 321 with a dielectric material, a second insulating layer323 is deposited to completely fill the trenches 308 forming, togetherwith the first insulating layer 321, insulating material 360, which canbe planarized to the first side 301 as described before. This layerstack with the polysilicon gate electrode 321 basically corresponds tothe insulating material 360 that fills the trench 308. The gateelectrode 321 is thus embedded in the insulating material formed by thegate dielectric 322 and the second insulating layer 323.

In a further process, an electrical connection from the surface or firstside 301 to the gate electrode 321 is formed, for example by depositinga conductive material, such as highly doped polysilicon, into an hole orcontact opening etched into the second insulating layer 323 down to thetop of gate electrode 321, followed by an etching back process to recessthe deposited conductive material to the side 301.

The electrical connection to the gate electrode 321 can also be formedin a laterally enlarged portion of the trench 308. For example, thetrench 308 may include a portion that has a larger lateral width thanthe remaining portions of the trench 308. When conformally depositingthe second insulating layer 323 into the enlarged portion, the portionis not completely filled. Using an anisotropic etching back process,spacers above the gate electrode at the sidewalls of the trench 308 areformed from the deposited material of the second insulating layer 323while the deposited material is removed from the gate electrode betweenthe spacers. A conductive material can then be deposited to form theelectrical connection to the gate electrode 321.

The body contact structure 330 b has basically the same structure as therespective semiconductor devices with the difference, that a doping well318 which is of the same conductivity as the respective body region 312is embedded in the source region 311. Furthermore, instead of a sourcecontact region 314, which is of the same conductivity type as the sourceregion 311, a well contact region 315 is formed which is of the sameconductivity type as the body region 312. This modification provides anohmic connection between the second metal layer 372 and the body regions312 through the second silicide layer 352, the well contact region 315and the doping well 318.

FIG. 15C illustrates a plan view onto a section of the semiconductordevice including the semiconductor element 330 a and the body contactstructure 330 b. FIG. 15C only shows the doping regions relative to thefirst metal layer 371 which form the drain contacts. By additionallyimplanting the doping well 318 and reversing the conductivity type ofthe source contact regions 314 to form well contact regions 315 both thesource region 311 and the body region 312, which is arranged below thefirst metal layer 371, can be electrically connected.

In view of the above, a method for manufacturing a semiconductor deviceincludes providing a semiconductor substrate 100 having a first side101. A trench 108 having a bottom 108 a is formed. The trench 108separates a first mesa region 107 a from a second mesa region 107 bformed in the semiconductor substrate 100. The trench 108 is filled withan insulating material 160, and the second mesa region 107 b is removedrelative to the insulating material 160 filled in the trench 108 to forma recess 109 in the semiconductor substrate 100. In a common process, afirst silicide layer 151 is formed on and in contact with a top region110 of the first mesa region 107 a at the first side 101 of thesemiconductor substrate 100 and a second silicide layer 152 is formed onand in contact with the bottom 109 a of the recess 109.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, the method comprising: providing a semiconductor substratehaving a first side; forming a trench having a bottom, the trenchextending from the first side of the semiconductor substrate into thesemiconductor substrate and separating a first mesa region formed in thesemiconductor substrate from a second mesa region formed in thesemiconductor substrate; filling the trench with an insulating material;removing the second mesa region relative to the insulating materialfilled in the trench to form a recess in the semiconductor substrate,the recess having at least one side wall covered with the insulatingmaterial and a bottom; and forming, in a common process, a firstsilicide layer on and in contact with a top region of the first mesaregion at the first side of the semiconductor substrate and a secondsilicide layer on and in contact with the bottom of the recess.
 2. Themethod of claim 1, wherein a distance between the first side of thesemiconductor substrate and the bottom of the recess is at least 500 nm.3. The method of claim 1, further comprising: depositing a common metallayer on and in contact with the first silicide layer and on and incontact with the second silicide layer; forming a mask layer on themetal layer; and etching the common metal layer using the mask layer asan etching mask to form a first metal layer on and in contact with thefirst silicide layer and a second metal layer on and in contact with thesecond silicide layer.
 4. The method of claim 1, further comprising:forming a first doping region in the first mesa region, wherein thefirst silicide layer is in ohmic contact with the first doping region;and forming a second doping region in the semiconductor substrate at thebottom of the recess, wherein the second silicide layer is in ohmiccontact with the second doping region.
 5. The method of claim 1, whereinthe trench completely laterally surrounds the second mesa region whenviewed in plane projection onto the first side of the semiconductorsubstrate.
 6. The method of claim 1, wherein the second mesa regionforms, when viewed in plane projection onto the first side of thesemiconductor substrate, a closed ring structure, wherein the secondmesa region is laterally bound by an inner trench and an outer trench.7. The method of claim 1, further comprising: depositing a metal linercomprising at least a silicide-forming metal on the first side of thesemiconductor substrate and in the recess; conducting a thermaltreatment so that the silicide-forming metal of the metal liner reactswith exposed regions of the semiconductor substrate to form the firstand second silicide layers; and removing unreacted silicide-formingmetal from the insulating material.